EE-SY672 Photomicrosensor NEW

Item

Models

EE-SY671, EE-SY672

Sensing distance

1 to 5 mm (Reflection factor: 90%; white paper 15 × 15 mm)

Sensing object

Transparent or opaque: 15 × 15 mm min.

Differential distance

0.5 max. (with a sensing distance of 3 mm, horizontally)

Light source

GaAs infrared LED with a peak wavelength of 940 nm

Indicator *1

Light indicator (red)

Supply voltage

5 to 24 VDC ±10%, ripple (p-p): 10% max.

Current consumption

40 mA max.

Control output

NPN open collector: Load power supply voltage: 5 to 24 VDC Load current: 100 mA max. OFF current: 0.5 mA max. 100 mA load current with a residual voltage of 0.8 V max. 40 mA load current with a residual voltage of 0.4 V max.

Response frequency *2

50 Hz min. (Average: 500 Hz)

Ambient illumination *3

1,500 lx max. with fluorescent light on the surface of the receiver

Ambient temperature range

Operating: −25 to +55°C Storage: −30 to +80°C

Ambient humidity range

Operating: 5% to 85% Storage: 5% to 95%

Vibration resistance

Destruction: 20 to 2,000 Hz (peak acceleration: 100 m/s2) 1.5-mm double amplitude for 2 h (4-min periods) each in X, Y, and Z directions

Shock resistance

Destruction: 500m/s2 for 3 times each in X, Y, and Z directions

Degree of protection

IEC IP50

Connecting method

Special connector (direct soldering possible)

Weight

Approx. 3.5 g (including screwdriver for adjustment)

Material

Case

Polybutylene phthalate (PBT)

Emitter/ receiver

Polycarbonate

Accessories

Screwdriver for adjustment